SICW030N120H4-BP MCC (Micro Commercial Components)

Description: SIC MOSFETS,TO-247-4, Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 4.5V @ 50mA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 78A (Tc), FET Type: N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Bulk, Technology: SiCFET (Silicon Carbide).