SICW20C120 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 80A
Max. forward voltage: 1.8V
Leakage current: 40µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 18.59 EUR |
| 6+ | 12.21 EUR |
| 7+ | 11.55 EUR |
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Technische Details SICW20C120 DIOTEC SEMICONDUCTOR
Description: DIODE ARR SIC SCHOT 1200V TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-247, Operating Temperature - Junction: -50°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote SICW20C120 nach Preis ab 11.55 EUR bis 59 EUR
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SICW20C120 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 80A Max. forward voltage: 1.8V Leakage current: 40µA |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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SICW20C120 | Hersteller : Diotec Semiconductor |
Description: DIODE ARR SIC SCHOT 1200V TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-247 Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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SICW20C120 | Hersteller : Diotec Semiconductor |
Schottky Diodes & Rectifiers SiC Schottky Diode, TO-247-3L, 1200V, 20A |
auf Bestellung 444 Stücke: Lieferzeit 10-14 Tag (e) |
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