SIDC08D60C8X1SA3 Infineon Technologies

Description: DIODE GEN PURP 600V 30A DIE, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk, Current - Reverse Leakage @ Vr: 27 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: Die, Current - Average Rectified (Io): 30A.