SIDC14D60C6 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GP 600V 50A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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Technische Details SIDC14D60C6 Infineon Technologies
Description: DIODE GP 600V 50A WAFER, Current - Reverse Leakage @ Vr: 27 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Discontinued at Digi-Key, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: Sawn on foil, Current - Average Rectified (Io): 50A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.
Weitere Produktangebote SIDC14D60C6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| SIDC14D60C6 | Infineon Technologies |
Diodes - General Purpose, Power, Switching DIODEN-CHIPS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIDC14D60C6 |
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Hersteller: Infineon Technologies
Diodes - General Purpose, Power, Switching DIODEN-CHIPS
Diodes - General Purpose, Power, Switching DIODEN-CHIPS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
