SIDR402EP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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Technische Details SIDR402EP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) 175C MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8DC, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 7.5W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIDR402EP-T1-RE3 nach Preis ab 1.89 EUR bis 5.83 EUR
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SIDR402EP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 40 V (D-S) 175C MOSFET Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 5897 Stücke: Lieferzeit 10-14 Tag (e) |
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SIDR402EP-T1-RE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET |
auf Bestellung 8771 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIDR402EP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5897 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.91 EUR |
| 10+ | 3.2 EUR |
| 100+ | 2.22 EUR |
| 500+ | 1.89 EUR |
| SIDR402EP-T1-RE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
auf Bestellung 8771 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.83 EUR |
| 10+ | 3.82 EUR |
| 100+ | 2.66 EUR |
| 500+ | 2.18 EUR |
| 3000+ | 2.08 EUR |