SIE822DF-T1-E3 Vishay / Siliconix

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 50A; Idm: 80A; 104W, Case: PowerPAK® SO8, Mounting: SMD, Kind of package: reel; tape, Drain-source voltage: 20V, Drain current: 50A, On-state resistance: 5.5mΩ, Type of transistor: N-MOSFET, Power dissipation: 104W, Polarisation: unipolar, Gate charge: 78nC, Technology: TrenchFET®, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 80A, Anzahl je Verpackung: 3000 Stücke.