SIHA15N60E-E3 Vishay / Siliconix
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.31 EUR |
| 10+ | 4.25 EUR |
| 100+ | 3.42 EUR |
| 500+ | 2.83 EUR |
| 1000+ | 2.68 EUR |
| 2000+ | 2.59 EUR |
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Technische Details SIHA15N60E-E3 Vishay / Siliconix
Description: MOSFET N-CH 600V 15A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V.
Weitere Produktangebote SIHA15N60E-E3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SIHA15N60E-E3 | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Mounting: THT Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220FP On-state resistance: 0.28Ω Pulsed drain current: 39A Power dissipation: 34W Gate charge: 76nC Polarisation: unipolar Drain current: 9.6A |
auf Bestellung 432 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SIHA15N60E-E3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.28Ω
Pulsed drain current: 39A
Power dissipation: 34W
Gate charge: 76nC
Polarisation: unipolar
Drain current: 9.6A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.28Ω
Pulsed drain current: 39A
Power dissipation: 34W
Gate charge: 76nC
Polarisation: unipolar
Drain current: 9.6A
auf Bestellung 432 Stücke:
Lieferzeit 14-21 Tag (e)