SIHA186N60EF-GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 1+ | 6.32 EUR |
| 10+ | 4.12 EUR |
| 100+ | 3.08 EUR |
| 500+ | 2.57 EUR |
| 1000+ | 2.39 EUR |
| 2000+ | 2.36 EUR |
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Technische Details SIHA186N60EF-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 8.4A TO220, Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220 Full Pack, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 156W (Tc), Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote SIHA186N60EF-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SIHA186N60EF-GE3 | Vishay |
 Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
SIHA186N60EF-GE3 | Vishay |
Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
SIHA186N60EF-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 8.4A TO220 Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHA186N60EF-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIHA186N60EF-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIHA186N60EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 8.4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 8.4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH