Technische Details SIHA21N65EF-E3 Vishay
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 35W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 13A, Power dissipation: 35W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 0.18Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 53A, Gate charge: 106nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHA21N65EF-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHA21N65EF-E3 | Hersteller : VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 53A Gate charge: 106nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHA21N65EF-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 650V 21A TO220 |
Produkt ist nicht verfügbar |
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SIHA21N65EF-E3 | Hersteller : Vishay / Siliconix |
MOSFET 650V Vds 30V Vgs TO-220 FULLPAK |
Produkt ist nicht verfügbar |
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| SIHA21N65EF-E3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 53A Gate charge: 106nC |
Produkt ist nicht verfügbar |