SIHA22N60EL-GE3 Vishay / Siliconix
auf Bestellung 977 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.11 EUR |
| 10+ | 5.32 EUR |
| 25+ | 4.73 EUR |
| 100+ | 4.05 EUR |
| 250+ | 3.80 EUR |
| 500+ | 3.43 EUR |
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Technische Details SIHA22N60EL-GE3 Vishay / Siliconix
Description: N-CHANNEL600V, Packaging: Tape & Reel (TR), Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 100 V.
Weitere Produktangebote SIHA22N60EL-GE3 nach Preis ab 3.35 EUR bis 7.29 EUR
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SIHA22N60EL-GE3 | Hersteller : Vishay Siliconix |
 Description: N-CHANNEL600VPackaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 100 V |
auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA22N60EL-GE3 | Hersteller : Vishay |
EL Series Power MOSFET |
Produkt ist nicht verfügbar |
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SIHA22N60EL-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL600V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 100 V |
Produkt ist nicht verfügbar |