SIHB11N80AE-T5-GE3 Vishay Siliconix

Description: N-CHANNEL 800V, Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 78W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).