SIHB12N50E-GE3 Vishay / Siliconix

Description: MOSFET N-CH 500V 10.5A D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 114W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V.