SIHD6N80E-GE3 Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.51 EUR |
| 10+ | 2.75 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2 EUR |
| 1000+ | 1.95 EUR |
| 3000+ | 1.83 EUR |
| 6000+ | 1.8 EUR |
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Technische Details SIHD6N80E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 800V 5.4A DPAK, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V.
Weitere Produktangebote SIHD6N80E-GE3 nach Preis ab 1.51 EUR bis 5.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SIHD6N80E-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 800V 5.4A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V |
auf Bestellung 1972 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD6N80E-GE3 | Vishay |
Trans MOSFET N-CH 800V 5.4A 3-Pin(2+Tab) TO-252AA |
auf Bestellung 1935 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SIHD6N80E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Description: MOSFET N-CH 800V 5.4A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
auf Bestellung 1972 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.62 EUR |
| 10+ | 3.63 EUR |
| 50+ | 2.77 EUR |
| 100+ | 2.5 EUR |
| 500+ | 2.02 EUR |
| SIHD6N80E-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 800V 5.4A 3-Pin(2+Tab) TO-252AA
Trans MOSFET N-CH 800V 5.4A 3-Pin(2+Tab) TO-252AA
auf Bestellung 1935 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 114+ | 1.51 EUR |