SIHF23N60E-GE3 Vishay / Siliconix
auf Bestellung 915 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.55 EUR |
| 10+ | 4.38 EUR |
| 100+ | 3.38 EUR |
| 500+ | 2.99 EUR |
| 1000+ | 2.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHF23N60E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 23A TO220, Packaging: Tape & Reel (TR), Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V.
Weitere Produktangebote SIHF23N60E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SIHF23N60E-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220 Full-Pak |
Produkt ist nicht verfügbar |
|
 |
SIHF23N60E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 23A TO220 Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V |
Produkt ist nicht verfügbar |
|
| SIHF23N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 63A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 158mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 95nC Pulsed drain current: 63A |
Produkt ist nicht verfügbar |