SIHF9Z34STRL-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CHANNEL 60V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 730 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.50 EUR |
| 10+ | 2.24 EUR |
| 100+ | 1.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHF9Z34STRL-GE3 Vishay Siliconix
Description: MOSFET P-CHANNEL 60V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V, Power Dissipation (Max): 3.7W (Ta), 88W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote SIHF9Z34STRL-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SIHF9Z34STRL-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH Si 60V 18A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|
 |
SIHF9Z34STRL-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH Si 60V 18A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|
| SIHF9Z34STRL-GE3 | Hersteller : VISHAY |
SIHF9Z34STRL-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
||
|
|
SIHF9Z34STRL-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CHANNEL 60V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
SIHF9Z34STRL-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs SC70 P CHAN 60V |
Produkt ist nicht verfügbar |