Produkte > VISHAY / BC COMPONENTS > SIHFBF20STRL-GE3

SIHFBF20STRL-GE3 Vishay / BC Components



Hersteller: Vishay / BC Components
MOSFETs MOSFET N-CHANNEL 900V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SIHFBF20STRL-GE3 Vishay / BC Components

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W, Mounting: SMD, Gate charge: 38nC, Polarisation: unipolar, Drain current: 1.1A, Kind of channel: enhancement, Drain-source voltage: 900V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: D2PAK; TO263, On-state resistance: 8Ω, Pulsed drain current: 6.8A, Power dissipation: 54W.

Weitere Produktangebote SIHFBF20STRL-GE3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SIHFBF20STRL-GE3 SIHFBF20STRL-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
Mounting: SMD
Gate charge: 38nC
Polarisation: unipolar
Drain current: 1.1A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; TO263
On-state resistance:
Pulsed drain current: 6.8A
Power dissipation: 54W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHFBF20STRL-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
Mounting: SMD
Gate charge: 38nC
Polarisation: unipolar
Drain current: 1.1A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; TO263
On-state resistance:
Pulsed drain current: 6.8A
Power dissipation: 54W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH