SIHFL110TR-BE3 Vishay / Siliconix
auf Bestellung 19945 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.6 EUR |
| 10+ | 0.52 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.39 EUR |
| 2500+ | 0.3 EUR |
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Technische Details SIHFL110TR-BE3 Vishay / Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.
Weitere Produktangebote SIHFL110TR-BE3 nach Preis ab 0.39 EUR bis 0.86 EUR
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SIHFL110TR-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 100V 1.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
auf Bestellung 2140 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHFL110TR-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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| SIHFL110TR-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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SIHFL110TR-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.5A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
Produkt ist nicht verfügbar |