SIHFR014TR-GE3 VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 60V
Drain current: 4.9A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 31A
Case: DPAK; TO252
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 60V
Drain current: 4.9A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 31A
Case: DPAK; TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHFR014TR-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252, Mounting: SMD, Drain-source voltage: 60V, Drain current: 4.9A, On-state resistance: 0.2Ω, Type of transistor: N-MOSFET, Power dissipation: 25W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 11nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 31A, Case: DPAK; TO252, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFR014TR-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
SIHFR014TR-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252 Mounting: SMD Drain-source voltage: 60V Drain current: 4.9A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 31A Case: DPAK; TO252 |
Produkt ist nicht verfügbar |