SIHFR110-GE3 VISHAY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W, Gate charge: 8.3nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 17A, Mounting: SMD, Case: DPAK; TO252, Drain-source voltage: 100V, Drain current: 2.7A, On-state resistance: 0.54Ω, Type of transistor: N-MOSFET, Power dissipation: 25W, Polarisation: unipolar, Kind of package: reel; tape, Anzahl je Verpackung: 1 Stücke.