Technische Details SIHFR120TR-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W, Case: DPAK; TO252, Mounting: SMD, Kind of package: reel; tape, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate-source voltage: ±20V, Gate charge: 16nC, On-state resistance: 0.27Ω, Drain current: 4.9A, Pulsed drain current: 31A, Power dissipation: 42W, Drain-source voltage: 100V, Kind of channel: enhancement.
Weitere Produktangebote SIHFR120TR-GE3
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SIHFR120TR-GE3 | Hersteller : Vishay Semiconductors | MOSFETs MOSFET N-CHANNEL 100V |
Produkt ist nicht verfügbar |
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| SIHFR120TR-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16nC On-state resistance: 0.27Ω Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 42W Drain-source voltage: 100V Kind of channel: enhancement |
Produkt ist nicht verfügbar |