Technische Details SIHFR120TRL-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W, Case: DPAK; TO252, Mounting: SMD, Kind of package: reel; tape, Type of transistor: N-MOSFET, Power dissipation: 42W, Polarisation: unipolar, Gate charge: 16nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 31A, Drain-source voltage: 100V, Drain current: 4.9A, On-state resistance: 0.27Ω, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFR120TRL-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| SIHFR120TRL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 31A Drain-source voltage: 100V Drain current: 4.9A On-state resistance: 0.27Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR120TRL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 31A Drain-source voltage: 100V Drain current: 4.9A On-state resistance: 0.27Ω |
Produkt ist nicht verfügbar |