Technische Details SIHFR120TRL-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W, Case: DPAK; TO252, Mounting: SMD, Kind of package: reel; tape, Polarisation: unipolar, Gate-source voltage: ±20V, On-state resistance: 0.27Ω, Drain current: 4.9A, Kind of channel: enhancement, Pulsed drain current: 31A, Power dissipation: 42W, Drain-source voltage: 100V, Gate charge: 16nC, Type of transistor: N-MOSFET.
Weitere Produktangebote SIHFR120TRL-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SIHFR120TRL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: ±20V On-state resistance: 0.27Ω Drain current: 4.9A Kind of channel: enhancement Pulsed drain current: 31A Power dissipation: 42W Drain-source voltage: 100V Gate charge: 16nC Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |