SIHFR1N60ATRL-GE3 VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Technische Details SIHFR1N60ATRL-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 0.89A, Power dissipation: 36W, Case: DPAK; TO252, Gate-source voltage: ±30V, On-state resistance: 7Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 14nC, Pulsed drain current: 5.6A, Anzahl je Verpackung: 1 Stücke.
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| SIHFR1N60ATRL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 14nC Pulsed drain current: 5.6A |
Produkt ist nicht verfügbar |