SIHFR310TRR-GE3 Vishay Semiconductors

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252, On-state resistance: 3.6Ω, Mounting: SMD, Pulsed drain current: 6A, Power dissipation: 25W, Gate charge: 12nC, Polarisation: unipolar, Drain current: 1.1A, Kind of channel: enhancement, Drain-source voltage: 400V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Case: DPAK; TO252.