SIHFR9120-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 100V 5.6A DPAK
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 1.16 EUR |
| 18+ | 1.01 EUR |
| 100+ | 0.7 EUR |
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Technische Details SIHFR9120-GE3 Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A DPAK, Packaging: Tube, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V.
Weitere Produktangebote SIHFR9120-GE3 nach Preis ab 0.48 EUR bis 1.18 EUR
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SIHFR9120-GE3 | Hersteller : Vishay / Siliconix |
MOSFET -100V Vds 20V Vgs DPAK (TO-252) |
auf Bestellung 8730 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHFR9120-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 5.6A |
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| SIHFR9120-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.6A Pulsed drain current: -22A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR9120-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.6A Pulsed drain current: -22A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |