SIHG125N65E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
auf Bestellung 494 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.11 EUR |
| 10+ | 9.36 EUR |
| 25+ | 8.67 EUR |
| 100+ | 7.91 EUR |
| 250+ | 7.55 EUR |
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Technische Details SIHG125N65E-GE3 Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V.
Weitere Produktangebote SIHG125N65E-GE3 nach Preis ab 6.9 EUR bis 12.28 EUR
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SIHG125N65E-GE3 | Hersteller : Vishay |
MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.12 10V |
auf Bestellung 329 Stücke: Lieferzeit 10-14 Tag (e) |
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