SIHG16N50C-E3 Vishay Semiconductors
auf Bestellung 713 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.23 EUR |
| 10+ | 6.07 EUR |
| 100+ | 4.91 EUR |
| 500+ | 4.28 EUR |
| 1000+ | 3.50 EUR |
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Technische Details SIHG16N50C-E3 Vishay Semiconductors
Description: MOSFET N-CH 500V 16A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.
Weitere Produktangebote SIHG16N50C-E3 nach Preis ab 4.38 EUR bis 9.17 EUR
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SIHG16N50C-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 500V 16A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
auf Bestellung 308 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG16N50C-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AC |
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| SIHG16N50C-E3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhancement Drain-source voltage: 500V Drain current: 10A On-state resistance: 0.38Ω Power dissipation: 250W Gate charge: 68nC Gate-source voltage: ±30V Pulsed drain current: 40A Case: TO247AC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHG16N50C-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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| SIHG16N50C-E3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhancement Drain-source voltage: 500V Drain current: 10A On-state resistance: 0.38Ω Power dissipation: 250W Gate charge: 68nC Gate-source voltage: ±30V Pulsed drain current: 40A Case: TO247AC |
Produkt ist nicht verfügbar |