SIHG73N60AE-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 36.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 394 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
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Technische Details SIHG73N60AE-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 60A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 36.5A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 394 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V.
Weitere Produktangebote SIHG73N60AE-GE3 nach Preis ab 10.07 EUR bis 19.18 EUR
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SIHG73N60AE-GE3 | Vishay Semiconductors |
MOSFETs 600V Vds 30V Vgs TO-247AC |
auf Bestellung 117 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHG73N60AE-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs TO-247AC
MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 19.18 EUR |
| 10+ | 11.79 EUR |
| 100+ | 10.07 EUR |

