SiHH14N60EF-T1-GE3 Vishay / Siliconix
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.08 EUR |
| 10+ | 5.65 EUR |
| 100+ | 4.05 EUR |
| 500+ | 3.94 EUR |
| 1000+ | 3.84 EUR |
| 3000+ | 3.82 EUR |
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Technische Details SiHH14N60EF-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 15A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V.
Weitere Produktangebote SiHH14N60EF-T1-GE3 nach Preis ab 3.95 EUR bis 8.48 EUR
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SiHH14N60EF-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 15A PPAK 8 X 8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V |
auf Bestellung 1960 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHH14N60EF-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 15A 5-Pin PowerPAK EP T/R |
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SiHH14N60EF-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 15A PPAK 8 X 8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SiHH14N60EF-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 38A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 147W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 266mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 38A Gate charge: 84nC |
Produkt ist nicht verfügbar |