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SiHH14N60EF-T1-GE3

SiHH14N60EF-T1-GE3 Vishay Siliconix


sihh14n60ef.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V
auf Bestellung 2870 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.88 EUR
10+6.05 EUR
100+4.34 EUR
500+3.61 EUR
1000+3.45 EUR
Mindestbestellmenge: 3
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Technische Details SiHH14N60EF-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 600V 15A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V.

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SiHH14N60EF-T1-GE3 SiHH14N60EF-T1-GE3 Hersteller : Vishay / Siliconix sihh14n60ef.pdf MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.96 EUR
10+6.23 EUR
100+4.49 EUR
500+3.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHH14N60EF-T1-GE3 Hersteller : Vishay sihh14n60ef.pdf Trans MOSFET N-CH 600V 15A 5-Pin PowerPAK EP T/R
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SiHH14N60EF-T1-GE3 Hersteller : VISHAY sihh14n60ef.pdf SIHH14N60EF-T1-GE3 SMD N channel transistors
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SiHH14N60EF-T1-GE3 SiHH14N60EF-T1-GE3 Hersteller : Vishay Siliconix sihh14n60ef.pdf Description: MOSFET N-CH 600V 15A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH