SIHH150N60E-T1-FE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
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Technische Details SIHH150N60E-T1-FE3 Vishay Siliconix
Description: E SERIES POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V.
Weitere Produktangebote SIHH150N60E-T1-FE3 nach Preis ab 3.25 EUR bis 10.03 EUR
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SIHH150N60E-T1-FE3 | Vishay Siliconix |
Description: E SERIES POWER MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHH150N60E-T1-FE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 600V |
auf Bestellung 2100 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHH150N60E-T1-FE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
Description: E SERIES POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.4 EUR |
| 10+ | 6.22 EUR |
| 100+ | 4.43 EUR |
| 500+ | 3.88 EUR |
| SIHH150N60E-T1-FE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 600V
MOSFETs N-CHANNEL 600V
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.03 EUR |
| 10+ | 6.58 EUR |
| 100+ | 4.9 EUR |
| 500+ | 4.11 EUR |
| 1000+ | 3.96 EUR |
| 3000+ | 3.36 EUR |
| 6000+ | 3.25 EUR |