Produkte > VISHAY SILICONIX > SIHH186N60EF-T1FE3
SIHH186N60EF-T1FE3

SIHH186N60EF-T1FE3 Vishay Siliconix


sihh186n60ef-fe3.pdf
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.34 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SIHH186N60EF-T1FE3 Vishay Siliconix

Description: N-CHANNEL 600V, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V.

Weitere Produktangebote SIHH186N60EF-T1FE3 nach Preis ab 2.86 EUR bis 7.13 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SIHH186N60EF-T1FE3 SIHH186N60EF-T1FE3 Hersteller : Vishay Siliconix sihh186n60ef-fe3.pdf Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.13 EUR
10+4.7 EUR
100+3.32 EUR
500+2.86 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH