SIHH250N60EF-T1GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 100 V
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Technische Details SIHH250N60EF-T1GE3 Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 5.5A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 100 V.
Weitere Produktangebote SIHH250N60EF-T1GE3 nach Preis ab 3.41 EUR bis 8.45 EUR
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SIHH250N60EF-T1GE3 | Vishay Semiconductors |
MOSFETs TO247 600V 13A N-CH MOSFET |
auf Bestellung 8920 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| SIHH250N60EF-T1GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 600V; 13A; 89W; 8,X Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 600V Drain current: 13A Power dissipation: 89W Case: 8; X Gate-source voltage: 30V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 23nC Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SIHH250N60EF-T1GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs TO247 600V 13A N-CH MOSFET
MOSFETs TO247 600V 13A N-CH MOSFET
auf Bestellung 8920 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.45 EUR |
| 10+ | 5.63 EUR |
| 100+ | 4.28 EUR |
| 500+ | 3.8 EUR |
| 1000+ | 3.68 EUR |
| 3000+ | 3.41 EUR |
| SIHH250N60EF-T1GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 13A; 89W; 8,X
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 89W
Case: 8; X
Gate-source voltage: 30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 13A; 89W; 8,X
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 89W
Case: 8; X
Gate-source voltage: 30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 3.49 EUR |