SIHH28N60E-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A PPAK 8 X 8
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 14A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 100 V
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Technische Details SIHH28N60E-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 29A PPAK 8 X 8, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 14A, 10V, Power Dissipation (Max): 202W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 100 V.
Weitere Produktangebote SIHH28N60E-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SIHH28N60E-T1-GE3 | Vishay Semiconductors |
MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHH28N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 76A; 202W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 76A Power dissipation: 202W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 98mΩ Mounting: SMD Gate charge: 129nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHH28N60E-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8
MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHH28N60E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 76A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 129nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 76A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 129nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH