SIHJ240N60E-T1-GE3 Vishay / Siliconix
auf Bestellung 5903 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.8 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.46 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 2.2 EUR |
| 3000+ | 1.94 EUR |
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Technische Details SIHJ240N60E-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 12A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V.
Weitere Produktangebote SIHJ240N60E-T1-GE3 nach Preis ab 2.14 EUR bis 4.84 EUR
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SIHJ240N60E-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 12A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V |
auf Bestellung 987 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHJ240N60E-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 12A 5-Pin(4+Tab) PowerPAK SO T/R |
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SIHJ240N60E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 12A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SIHJ240N60E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 89W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 89W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |