SIHK075N60E-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 12.69 EUR |
| 10+ | 8.62 EUR |
| 100+ | 7.36 EUR |
| 500+ | 6.55 EUR |
| 1000+ | 6.32 EUR |
| 2000+ | 5.86 EUR |
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Technische Details SIHK075N60E-T1-GE3 Vishay Semiconductors
Description: E SERIES POWER MOSFET POWERPAK 1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2582 pF @ 100 V.
Weitere Produktangebote SIHK075N60E-T1-GE3 nach Preis ab 4.75 EUR bis 12.69 EUR
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SIHK075N60E-T1-GE3 | Vishay Siliconix |
 Description: E SERIES POWER MOSFET POWERPAK 1Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2582 pF @ 100 V |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHK075N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 600V; 29A; 167W Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 29A Power dissipation: 167W Gate-source voltage: 30V On-state resistance: 80mΩ Mounting: SMD Gate charge: 62nC Kind of channel: enhancement |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHK075N60E-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2582 pF @ 100 V
Description: E SERIES POWER MOSFET POWERPAK 1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2582 pF @ 100 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.69 EUR |
| 10+ | 8.62 EUR |
| SIHK075N60E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 29A; 167W
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 167W
Gate-source voltage: 30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 62nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 29A; 167W
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 167W
Gate-source voltage: 30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 62nC
Kind of channel: enhancement
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 4.75 EUR |