Produktrezensionen
Produktbewertung abgeben
Technische Details SIHLR110TR-GE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W, Power dissipation: 25W, Mounting: SMD, Kind of package: reel; tape, Case: DPAK; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Pulsed drain current: 17A, Drain current: 2.7A, Gate charge: 6.1nC, On-state resistance: 760mΩ, Gate-source voltage: ±10V, Kind of channel: enhancement.
Weitere Produktangebote SIHLR110TR-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
SIHLR110TR-GE3 | Hersteller : Vishay Semiconductors | MOSFETs LOGIC MOSFET N-CHANNEL 100V |
Produkt ist nicht verfügbar |
|
| SIHLR110TR-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Power dissipation: 25W Mounting: SMD Kind of package: reel; tape Case: DPAK; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 17A Drain current: 2.7A Gate charge: 6.1nC On-state resistance: 760mΩ Gate-source voltage: ±10V Kind of channel: enhancement |
Produkt ist nicht verfügbar |