SIHLR110TR-GE3 VISHAY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 2.7A, Pulsed drain current: 17A, Power dissipation: 25W, Case: DPAK; TO252, Gate-source voltage: ±10V, On-state resistance: 760mΩ, Mounting: SMD, Gate charge: 6.1nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.