Technische Details SIHLR110TR-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 2.7A, Pulsed drain current: 17A, Power dissipation: 25W, Case: DPAK; TO252, Gate-source voltage: ±10V, On-state resistance: 760mΩ, Mounting: SMD, Gate charge: 6.1nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHLR110TR-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHLR110TR-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Pulsed drain current: 17A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHLR110TR-GE3 | Hersteller : Vishay / Siliconix | MOSFET |
Produkt ist nicht verfügbar |
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| SIHLR110TR-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Pulsed drain current: 17A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |