SIHP065N60E-BE3 Vishay / Siliconix
auf Bestellung 1211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.18 EUR |
| 10+ | 10.01 EUR |
| 25+ | 6.32 EUR |
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Technische Details SIHP065N60E-BE3 Vishay / Siliconix
Description: N-CHANNEL 600V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V.
Weitere Produktangebote SIHP065N60E-BE3 nach Preis ab 6.12 EUR bis 11.25 EUR
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SIHP065N60E-BE3 | Hersteller : Vishay Siliconix |
 Description: N-CHANNEL 600VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V |
auf Bestellung 1486 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHP065N60E-BE3 | Hersteller : Vishay |
N Channel Trans MOSFET |
Produkt ist nicht verfügbar |