auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 113+ | 1.32 EUR |
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Technische Details SIHP15N60E-GE3 Vishay
Description: MOSFET N-CH 600V 15A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100.
Weitere Produktangebote SIHP15N60E-GE3 nach Preis ab 1.32 EUR bis 5.26 EUR
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SIHP15N60E-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 221 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP15N60E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 15A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
auf Bestellung 16524 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP15N60E-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 600V Vds 30V Vgs TO-220AB |
auf Bestellung 1444 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP15N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SIHP15N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| SIHP15N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHP15N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |