Weitere Produktangebote SIHP15N80AE-GE3 nach Preis ab 1.51 EUR bis 2.97 EUR
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SIHP15N80AE-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 800V 13A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 100 V |
auf Bestellung 63 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP15N80AE-GE3 | Vishay / Siliconix |
MOSFETs TO220 800V 13A N-CH MOSFET |
auf Bestellung 1695 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHP15N80AE-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 100 V
Description: MOSFET N-CH 800V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 100 V
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 2.94 EUR |
| 50+ | 1.51 EUR |
| SIHP15N80AE-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 13A N-CH MOSFET
MOSFETs TO220 800V 13A N-CH MOSFET
auf Bestellung 1695 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.97 EUR |
| 10+ | 2.66 EUR |
| 100+ | 2.55 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 1.99 EUR |
| 2000+ | 1.88 EUR |
Mit diesem Produkt kaufen
| TL494CDR Produktcode: 123303
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Lieblingsprodukt
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Hersteller: TI
IC > IC Netzteile
Gehäuse: SOIC-16
Eigenschaften: Switching Controllers PWM Controller
Spannung, eing., V: 40 V
I-ausg., A: 0,2 A
Fosc, kHz: 300 kHz
Temperaturbereich: -40…+85°C
IC > IC Netzteile
Gehäuse: SOIC-16
Eigenschaften: Switching Controllers PWM Controller
Spannung, eing., V: 40 V
I-ausg., A: 0,2 A
Fosc, kHz: 300 kHz
Temperaturbereich: -40…+85°C
auf Bestellung 499 St.:
Lieferzeit 21-28 Tag (e)