
auf Bestellung 996 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
37+ | 4.05 EUR |
41+ | 3.51 EUR |
45+ | 3.11 EUR |
100+ | 2.79 EUR |
250+ | 2.55 EUR |
500+ | 2.33 EUR |
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Technische Details SIHP22N60E-E3 Vishay
Description: MOSFET N-CH 600V 21A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V.
Weitere Produktangebote SIHP22N60E-E3 nach Preis ab 2.33 EUR bis 6.60 EUR
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SIHP22N60E-E3 | Hersteller : Vishay |
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auf Bestellung 996 Stücke: Lieferzeit 14-21 Tag (e) |
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SiHP22N60E-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SiHP22N60E-E3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 2548 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP22N60E-E3 | Hersteller : Vishay |
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