| Anzahl | Preis |
|---|---|
| 1+ | 10.63 EUR |
| 10+ | 7.02 EUR |
| 100+ | 5.65 EUR |
| 500+ | 5.03 EUR |
| 1000+ | 4.51 EUR |
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Technische Details SIHP24N65E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 650V 24A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote SIHP24N65E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SIHP24N65E-GE3 | Vishay Siliconix |
 Транзистори |
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SIHP24N65E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 650V 24A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHP24N65E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 70A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 70A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHP24N65E-GE3 |
|
Hersteller: Vishay Siliconix
Транзистори
Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP24N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 650V 24A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP24N65E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 70A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 70A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 70A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 70A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH