SIHP25N60EFL-BE3 Vishay / Siliconix
auf Bestellung 1640 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.43 EUR |
| 10+ | 6.07 EUR |
| 25+ | 4.24 EUR |
| 100+ | 4.1 EUR |
| 500+ | 3.54 EUR |
| 1000+ | 3.52 EUR |
| 2000+ | 3.5 EUR |
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Technische Details SIHP25N60EFL-BE3 Vishay / Siliconix
Description: N-CHANNEL 600V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V.
Weitere Produktangebote SIHP25N60EFL-BE3 nach Preis ab 3.61 EUR bis 8.54 EUR
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SIHP25N60EFL-BE3 | Hersteller : Vishay Siliconix |
 Description: N-CHANNEL 600VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V |
auf Bestellung 897 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHP25N60EFL-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 25A |
Produkt ist nicht verfügbar |