auf Bestellung 1150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.1 EUR |
| 10+ | 5.88 EUR |
| 100+ | 5.51 EUR |
| 500+ | 4.38 EUR |
| 1000+ | 4.33 EUR |
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Technische Details SIHP28N60EF-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 28A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V.
Weitere Produktangebote SIHP28N60EF-GE3 nach Preis ab 4.44 EUR bis 9.29 EUR
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SIHP28N60EF-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 28A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHP28N60EF-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| SIHP28N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 75A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 123mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHP28N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 75A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 123mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |