SIHU5N50D-E3 Vishay Siliconix

Description: MOSFET N-CH 500V 5.3A TO251AA, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.