SIHW040N65E-GE3 Vishay Semiconductors

Description: N-CHANNEL 650V, Supplier Device Package: TO-247AD, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 391W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5344 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.