SIHW23N60E-GE3 Vishay Siliconix

Description: MOSFET N-CH 600V 23A TO247AD, Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 227W (Tc).