Technische Details SIL04P06YHE3-TP Micro Commercial Components
Description: IC, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V, Power Dissipation (Max): 1.7W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-6L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SIL04P06YHE3-TP
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| SIL04P06YHE3-TP | Hersteller : Micro Commercial Components |
 SIL04P06YHE3-TP |
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SIL04P06YHE3-TP | Hersteller : Micro Commercial Co |
Description: IC Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V Power Dissipation (Max): 1.7W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SIL04P06YHE3-TP | Hersteller : Micro Commercial Co |
Description: IC Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V Power Dissipation (Max): 1.7W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SIL04P06YHE3-TP | Hersteller : Micro Commercial Components (MCC) |
MOSFETs P-CHANNEL MOSFET,SOT23-6L |
Produkt ist nicht verfügbar |