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Technische Details SIR492DP-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 12V 40A PPAK SO-8, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 4.2W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 8 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIR492DP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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SIR492DP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 12V 40A PPAK SO-8Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 4.2W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 8 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SIR492DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 12V 40A PPAK SO-8 Power Dissipation (Max): 4.2W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 8 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 1V @ 250µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIR492DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 12V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIR492DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 40A PPAK SO-8
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Description: MOSFET N-CH 12V 40A PPAK SO-8
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH