SIR5406DP-T1-UE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V
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Technische Details SIR5406DP-T1-UE3 Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 71.4W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V.
Weitere Produktangebote SIR5406DP-T1-UE3 nach Preis ab 0.79 EUR bis 3.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SIR5406DP-T1-UE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 40-V (D-S) MOSFET |
auf Bestellung 2940 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5406DP-T1-UE3 | Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFETPackaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 71.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIR5406DP-T1-UE3 |
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Hersteller: Vishay Semiconductors
MOSFETs N-CHANNEL 40-V (D-S) MOSFET
MOSFETs N-CHANNEL 40-V (D-S) MOSFET
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.06 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.93 EUR |
| 3000+ | 0.81 EUR |
| 6000+ | 0.79 EUR |
| SIR5406DP-T1-UE3 |
![]() |
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.12 EUR |
| 11+ | 1.98 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.94 EUR |


