SIR5710DP-T1-RE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 3.2 EUR |
| 10+ | 1.88 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1 EUR |
| 3000+ | 0.91 EUR |
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Technische Details SIR5710DP-T1-RE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; N; 150V; 4.8W; PowerPAK® SO8, Gate charge: 15nC, On-state resistance: 31.5mΩ, Power dissipation: 4.8W, Gate-source voltage: 20V, Drain-source voltage: 150V, Case: PowerPAK® SO8, Kind of channel: enhancement, Polarisation: N, Type of transistor: N-MOSFET, Mounting: SMD.
Weitere Produktangebote SIR5710DP-T1-RE3 nach Preis ab 0.82 EUR bis 0.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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|---|---|---|---|---|---|---|---|
| SIR5710DP-T1-RE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; N; 150V; 4.8W; PowerPAK® SO8 Gate charge: 15nC On-state resistance: 31.5mΩ Power dissipation: 4.8W Gate-source voltage: 20V Drain-source voltage: 150V Case: PowerPAK® SO8 Kind of channel: enhancement Polarisation: N Type of transistor: N-MOSFET Mounting: SMD |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIR5710DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 4.8W; PowerPAK® SO8
Gate charge: 15nC
On-state resistance: 31.5mΩ
Power dissipation: 4.8W
Gate-source voltage: 20V
Drain-source voltage: 150V
Case: PowerPAK® SO8
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 4.8W; PowerPAK® SO8
Gate charge: 15nC
On-state resistance: 31.5mΩ
Power dissipation: 4.8W
Gate-source voltage: 20V
Drain-source voltage: 150V
Case: PowerPAK® SO8
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.82 EUR |