SIR5710DP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
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Technische Details SIR5710DP-T1-RE3 Vishay Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; N; 150V; 4.8W; PowerPAK® SO8, Gate charge: 15nC, On-state resistance: 31.5mΩ, Power dissipation: 4.8W, Gate-source voltage: 20V, Drain-source voltage: 150V, Case: PowerPAK® SO8, Kind of channel: enhancement, Polarisation: N, Type of transistor: N-MOSFET, Mounting: SMD.
Weitere Produktangebote SIR5710DP-T1-RE3 nach Preis ab 0.96 EUR bis 3.89 EUR
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SIR5710DP-T1-RE3 | Vishay Semiconductors |
MOSFETs SOT669 150V 26.8A N-CH MOSFET |
auf Bestellung 18068 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5710DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) MOSFET POW Packaging: Cut Tape (CT) |
auf Bestellung 4240 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIR5710DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 150V; 4.8W; PowerPAK® SO8 Gate charge: 15nC On-state resistance: 31.5mΩ Power dissipation: 4.8W Gate-source voltage: 20V Drain-source voltage: 150V Case: PowerPAK® SO8 Kind of channel: enhancement Polarisation: N Type of transistor: N-MOSFET Mounting: SMD |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SIR5710DP-T1-RE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs SOT669 150V 26.8A N-CH MOSFET
MOSFETs SOT669 150V 26.8A N-CH MOSFET
auf Bestellung 18068 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.81 EUR |
| 10+ | 2.24 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.19 EUR |
| 3000+ | 1.06 EUR |
| SIR5710DP-T1-RE3 |
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auf Bestellung 4240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.89 EUR |
| 10+ | 2.48 EUR |
| 100+ | 1.67 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.21 EUR |
| SIR5710DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 4.8W; PowerPAK® SO8
Gate charge: 15nC
On-state resistance: 31.5mΩ
Power dissipation: 4.8W
Gate-source voltage: 20V
Drain-source voltage: 150V
Case: PowerPAK® SO8
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 4.8W; PowerPAK® SO8
Gate charge: 15nC
On-state resistance: 31.5mΩ
Power dissipation: 4.8W
Gate-source voltage: 20V
Drain-source voltage: 150V
Case: PowerPAK® SO8
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.96 EUR |