| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.26 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.31 EUR |
| 6000+ | 0.27 EUR |
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Technische Details SIRA18DDP-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 30V 9A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V, Power Dissipation (Max): 3.8W (Ta), 17W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V.
Weitere Produktangebote SIRA18DDP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
SIRA18DDP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 30V 9A PPAK SO-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 17W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIRA18DDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 17W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Pulsed drain current: 90A Power dissipation: 17W Case: PowerPAK® SO8 Gate-source voltage: -16...20V Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 6.83mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIRA18DDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
Description: MOSFET N-CH 30V 9A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIRA18DDP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 90A
Power dissipation: 17W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 6.83mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 90A
Power dissipation: 17W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 6.83mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH